By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR‑N 7520 New Series is a premium negative tone photoresist engineered for high-resolution micro- and nanolithography. Designed for both research and industrial applications, it delivers exceptional pattern fidelity, uniform coating, and superior etch resistance, making it ideal for advanced semiconductor, MEMS, and photonics applications.
Characterisation:
E-beam, deep UV, i-line (formerly SX AR-N 7520/4).
Short writing times, very high contrast.
Mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range.
Highest resolution, very process-stable (no CAR).
Plasma etching resistant, temp.-stable up to 140 °C.
Novolac, organic crosslinking agent.
Safer solvent PGMEA.
AR-N 7520.07 new Properties:
- Solids content: 7%
- Viscosity 25 °C: 2 mPas
- Film thickness/4.000 rpm: 0.10 µm
- Storage temperature: 10-18 °C
AR-N 7520.11 new Properties:
- Solids content: 11%
- Viscosity 25 °C: 3 mPas
- Film thickness/4.000 rpm: 0.20 µm
- Storage temperature: 10-18 °C
AR-N 7520.17 new Properties:
- Solids content: 17%
- Viscosity 25 °C: 4 mPas
- Film thickness/4.000 rpm: 0.40 µm
- Storage temperature: 10-18 °C
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Processing Instructions:
These resists are predestined for e-beam exposure, but also suitable for UV exposure. Mix & match processes are possible if both exposure methods are carefully coordinated. During e-beam exposure, the resist works in a negative mode.
The resist works also in a negative mode with deep UV (248-270 nm) or mid-UV (290-365) exposure. If a further tempering step (85 °C, 2 min hot plate) is added after image-wise exposure, the sensitivity can be slightly enhanced.
The developer dilution should be adjusted with DI water such that the development time is in a range between 20 s and 120 s. By dilution of the developer, contrast and development rate can be influenced to a large degree. A stronger dilution results in an increased contrast and a reduced development rate.