By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR-P 641 Series is a high-resolution positive photoresist designed for advanced semiconductor, MEMS, and micro/nanofabrication applications. It offers excellent sensitivity, high contrast, and reproducible performance, enabling precise patterning at submicron and nanometer scales. This makes it ideal for both research and industrial lithography processes requiring accuracy and reliability.
Characterisation
- e-beam, deep UV (248 nm)
- very good adhesion to glass, silicon and metals
- for planarization and multi-layer processes
- highest resolution, high contrast
- poly(methyl methacrylate) with diff. molecular weights
AR-P 641.07 Properties:
- Film thickness/4.000 rpm: 0.37 µm
- Resolution best value: 6 nm
- Flash point: 28 °C
- Storage temperature: 10-22 °C
AR-P 641.09 Properties:
- Film thickness/4.000 rpm: 0.59 µm
- Resolution best value: 6 nm
- Flash point: 28 °C
- Storage temperature: 10-22 °C
Available to order in pack sizes:
- 100 ml
- 250 ml
- 1L
Pricing available on request.
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Processing Instructions For Coating:
Large undercut structures (lift-off) are obtained if PMMA resists with different molecular weight are chosen for a two component system. As upper layer, an ethyl lactate PMMA is recommended since ethyl lactate does not, in contrast to other solvents, attack the second layer. For the lower layer, a chlorobenzene, anisole or ethyl lactate PMMA is suitable. Both tempering steps are performed at 150 °C.
Recommendation: large undercut (low resolution): bottom layer 50K, upper layer 200K, 600K or 950K. High resolution (smaller undercut): bottom layer 600K, upper layer 950K.