By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR-P 3200 Series is a high-resolution positive photoresist designed for advanced semiconductor, MEMS, and micro-/nanofabrication applications. It is engineered to deliver precise patterning, high contrast, and excellent process reproducibility, making it suitable for both research and industrial-scale lithography.
Characterisation
- broadband UV, i-line, g-line
- high photosensitivity, high resolution
- profiles with high edge steepness dimens. accuracy
- plasma etch resistant, electroplating-stable
- AR-P 3210/AR-P 3250 for film thicknesses up to 40 μm / 20 μm
- AR-P 3220 transparent for thick films up to 100μm in multiple coating steps, 100 μm development in one step
- combination of novolac and naphthoquinone diazide
- safer solvent PGMEA
AR-P 3210 Properties:
- Solids content: 47%
- Viscosity 25 °C: 1990 mPas
- Film thickness/4.000 rpm: 10 µm
- Resolution: 4.0 µm
- Flash Point: 42 °C
- Storage 6 month: 10-18 °C
AR-P 3220 Properties:
Solids content: 47%
Viscosity 25 °C: 1820 mPas
Film thickness/4.000 rpm: 10 µm
Resolution: 3.0 µm
Flash Point: 42 °C
Storage 6 month: 10-18 °C
AR-P 3250 Properties:
- Solids content: 39%
- Viscosity 25 °C: 25 mPas
- Film thickness/4.000 rpm: 5 µm
- Resolution: 1.2 µm
- Flash Point: 42 °C
- Storage 6 month: 10-18 °C
Pricing and pack sizes available on request.
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Processing instructions (for the processing of thick films > 40 µm)
Coating: Coating should be performed in two or several steps using the same procedure. After a low initial spin speed (30 s), a main spin speed of 250 – 500 rpm for at least 2-5 min should be chosen. A brief subsequent spinning off at 600 – 800 rpm for 5 s reduces edge bead formation.
Tempering: Tempering should be performed in 2 steps: 1. 75 °C, 5 min hot plate or 70 °C, 30 min convection oven; 2. 90 °C, 20 min hot plate or 90 °C, 80 min convection oven. After tempering, a slow cooling is recommended to avoid stress cracks.