By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR-P 649 Series is a high-resolution positive photoresist specifically designed for advanced semiconductor, MEMS, and micro-/nanofabrication applications. It offers exceptional resolution, high contrast, and reliable reproducibility, enabling precise patterning at submicron and nanometer scales. This makes it ideal for both research and industrial lithography processes that demand accuracy, consistency, and stability.
The AR-P 649 Series ensures sharp line-edge definition, uniform resist thickness, and low defect density, delivering high-quality pattern transfer even in demanding fabrication processes. Its strong adhesion to silicon, glass, and other common substrates, combined with thermal and chemical stability, allows flexible use in a wide range of lithographic applications.
Characterisation:
- e-beam, deep UV (248 nm)
- very good adhesion to glass, silicon and metals
- for planarization and multi-layer processes
- highest resolution, high contrast
- poly(methyl methacrylate) with diff. molecular weights
AR-P 649.04 Properties:
- Film thickness/4.000 rpm: 0.15 µm
- Resolution best value: 6 nm
- Flash point: 36 °C
- Storage 6 month: 10-22 °C
Available to order in pack sizes:
- 100 ml
- 250 ml
- 1L
Pricing available on request.
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Processing Instructions For Coating:
Large undercut structures (lift-off) are obtained if PMMA resists with different molecular weight are chosen for a two component system. As upper layer, an ethyl lactate PMMA is recommended since ethyl lactate does not, in contrast to other solvents, attack the second layer. For the lower layer, a chlorobenzene, anisole or ethyl lactate PMMA is suitable. Both tempering steps are performed at 150 °C.
Recommendation: large undercut (low resolution): bottom layer 50K, upper layer 200K, 600K or 950K. High resolution (smaller undercut): bottom layer 600K, upper layer 950K.