By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR-P 6510 Series is a high-resolution positive photoresist specifically developed for advanced semiconductor, MEMS, and micro-/nanofabrication applications. It delivers outstanding resolution, high sensitivity, and reproducible performance, enabling precise patterning at submicron and nanoscale dimensions. This makes it ideal for both research and industrial lithography processes that require accuracy, stability, and reliability.
Characterisation
- e-beam, synchrotron, X-ray (no yellow light required)
- excellent image quality
- solvent-based developer
- film thickness values of 10 μm to 250 μm
- process-stable
- high molecular weight poly(methyl methacrylate)
- Safer Solvent PGMEA
AR-P 6510.15 Properties:
- Solids content: 15%
- Viscosity 25 °C: 12.2 mPas
- Film thickness/4.000 rpm: 45 µm
- Storage temperature: 10-22 °C
Pricing and pack sizes available on request.
There are currently no videos available.
Processing Instructions For Coating:
Prior to spin coating it is recommended to remove gases which may possibly be present. The highly viscous resist should therefore rest a few hours before use. A warming of resist bottles in a water bath to 50 °C max. to reduce the viscosity and the utilisation of ultrasound support the removal of gas bubbles. Resist deposition should be performed as carefully as possible to avoid any additional introduction of air bubbles. Slow spin speeds and low exposure times are advantageous (200 to 350 rpm, > 3 min). Edge bead formation can be reduced if the rotational speed is briefly increased towards the end of the coating procedure (for 10 s to max. 500 rpm). The amount of resist will also influence the film thickness; for 4 inch-wafers, the use of at least 10 g of resist are recommended. In order to obtain optimum film qualities, own experiments of each user are required.