By ALLRESIST GmbH
Supplier Info
Product Type:
Parts & Consumables
Application:
Chemicals & Photoresists
Product Description:
The Allresist AR-P 679 Series is a high-resolution positive photoresist developed for advanced semiconductor, MEMS, and micro-/nanofabrication applications. Engineered for precision, reliability, and reproducibility, it enables submicron and nanoscale patterning, making it ideal for both research and industrial lithography processes.
Characterisation
- e-beam, deep UV (248 nm)
- very good adhesion to glass, silicon and metals
- for planarization and multi-layer processes
- highest resolution, high contrast
- poly(methyl methacrylate) with diff. molecular weights
AR-P 679.02 Properties:
- Film thickness/4.000 rpm: 0.07 µm
- Resolution best value: 6 nm
- Flash point: 36 °C
- Storage 6 month: 10-22 °C
AR-P 679.03 Properties:
- Film thickness/4.000 rpm: 0.16 µm
- Resolution best value: 6 nm
- Flash point: 36 °C
- Storage 6 month: 10-22 °C
AR-P 679.04 Properties:
- Film thickness/4.000 rpm: 0.27 µm
- Resolution best value: 6 nm
- Flash point: 36 °C
- Storage 6 month: 10-22 °C
Available to order in pack sizes:
- 100 ml
- 250 ml
- 1L
Pricing available on request.
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Processing Instructions For Coating:
Large undercut structures (lift-off) are obtained if PMMA resists with different molecular weight are chosen for a two component system. As upper layer, an ethyl lactate PMMA is recommended since ethyl lactate does not, in contrast to other solvents, attack the second layer. For the lower layer, a chlorobenzene, anisole or ethyl lactate PMMA is suitable. Both tempering steps are performed at 150 °C.
Recommendation: large undercut (low resolution): bottom layer 50K, upper layer 200K, 600K or 950K. High resolution (smaller undercut): bottom layer 600K, upper layer 950K.